基于煤矿职工“三违”情况的调查分析及对策研究

"三违"行为是导致煤矿生产安全事故发生的主要因素,本文在对企业及工人等各个方面开展调查的基础上,分析煤矿企业"三违"现状、产生原因,提出反"三违"的措施建议,可指导煤矿规范操作行为,有效防范事故发生。     

中国铅锌矿能源资源基地开发利用现状研究

我国铅锌矿产资源丰富，生产能力、消费量、出口量居世界前列，是我国的优势矿种。以10个铅锌矿能源资源基地为研究对象，对基地分布、矿山数量、产能结构、开发利用指标、矿业固废循环利用指标等进行了分析研究。研究表明，2018年，我国铅锌矿大型资源基地的矿业集中度和铅锌矿的综合利用率均高于全国平均水平。     

基于局部放电法的矿用高压电缆信号去噪算法研究

干扰噪声直接影响局部放电法有效检测矿用高压电缆故障。基于局部放电法，综合采用理论计算、仿真实验、现场试验的方法，对比分析了短时傅里叶变换和傅里叶分析去噪法的原理和优缺点，提出了一种矿用高压电缆的局部放电去噪算法——小波阈值去噪法，同时，选择了合理的阈值函数和去噪流程。基于此，采用白噪声和连续周期信号作为高压电缆的干扰噪声，进行了模拟仿真实验。结果表明，小波阈值去噪法可有效抑制白噪声，其中，Db2小波性能和去噪效果最好；同时，现场试验结果显示，去噪后信噪比得到了显著增加，验证了小波阈值去噪法的合理性和可靠性。     

煤矿智能化建设目标和总体框架的研究与设计

为了推进煤矿智能化转型升级,提升煤矿安全生产水平,增强煤矿企业的核心竞争力,对煤矿智能化建设目标和总体框架进行了研究,提出了煤矿智能化建设“四横四纵”总体框架,并详细介绍了智能化的生产系统、高速安全的传输网络系统、智能支撑平台、智慧协同管控系统的煤矿智能化主要系统建设以及安全可靠的运行保障体系、严谨全面的标准规范体系、统一完备的煤矿智能化工作机制以及创新实用的产学研用机制的煤矿智能化体系与机制建设。     

Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

The synthesis of large‐area TiS₂ thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H₂S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because Ti? O bonds present a substantial kinetic and thermodynamic barrier to TiS₂ formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS₂ and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.     

Environmental Control of Triplet Emission in Donor–Bridge–Acceptor Organometallics

Carbene‐metal‐amides (CMAs) are a promising family of donor–bridge–acceptor molecular charge‐transfer (CT) emitters for organic light‐emitting diodes. A universal approach is demonstrated to tune the energy of their CT emission. A blueshift of up to 210 meV is achievable in solid state via dilution in a polar host matrix. The origin of this shift has two components: constraint of thermally‐activated triplet diffusion, and electrostatic interactions between guest and polar host. This allows the emission of mid‐green CMA archetypes to be tuned to sky blue without chemical modifications. Monte‐Carlo simulations based on a Marcus‐type transfer integral successfully reproduce the concentration‐ and temperature‐dependent triplet diffusion process, revealing a substantial shift in the ensemble density of states in polar hosts. In gold‐bridged CMAs, this shift does not lead to a significant change in luminescence lifetime, thermal activation energy, reorganization energy, or intersystem crossing rate. These discoveries offer new insight into coupling between the singlet and triplet manifolds in CMA materials, revealing a dominant interaction between states of CT character. The same approach is employed using materials which have been chemically modified to alter the energy of their CT state directly, shifting the emission of sky‐blue chromophores into the practical blue range.     

Carbon nanotube filter for heavy metal ion adsorption

This study investigated carbon nanotube filtration technology using catalyst particles supported on silicalite-1–biomorphic carbon materials (BCMs). Aqueous solutions of Mn(II), Cu(II), Cr(III), Cd(II), and Pb(II) were used to test the efficiency of heavy metal ions removal. Carbon nanotubes (CNTs) were synthesized and grown on BCMs by the chemical vapor deposition method catalyzed with the catalyst (Co, Fe, and Ni). The synthesized CNTs with Co– and Fe– nanoparticles were typically multi-walled carbon nanotubes, and they showed good crystallinity (I_D/I_G = 1.05) and yield of (11.10 and 8.86) %. The removal efficiency of Mn(II), Cu(II), Cr(III), Cd(II), and Pb(II) ions using Co-catalyzed CNT filter was 97.57%, 98.01%, 97.89%, 97.42%, and 99.99%, respectively.     

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Giant photoresponsivity of transfer free grown fluorographene – MoS2 heterostructured ultra-stable transistors

Development of metal dichalcogenides based air and water stable opto-electronic devices is a bottleneck in their commercial implementation. Here we address this issue by the direct catalyst-free deposition of fluorographene (FG) protective layer over monolayer MoS₂ (MS), where such an atomic interface is found to be providing enormous photoresponse and chemical stability to the device. Electric field modulated (ionic liquid (IL) electrolyte based top-gated) photodetectors are developed with MS only and FG-MS heterostructure, where the MS photodetector has the responsivity of ~1.3 A/W (with V_GS = 0 V while unstable with IL gating) while that of FG-MS is ~2000 A/W (with V_GS = 0 V and ~8000 A/W with V_GS = 1.5 V, and the detectivity ~10¹³). This giant photoresponse of the FG-MS is validated with the help of ultrafast transient absorption spectroscopy assisted charge carrier dynamics studies at different temperatures. The broad optical response (350–850 nm) of the FG-MS is found to be intact not only in IL based gating but also after exposing in water for a month or heat treated in air at 200 °C. Interfacing and capping with FG, developed via the direct growth method, are found to be ideal for realizing high shelf-life and good responsivity photodetectors and solar cells of several other monolayer TMDs too, while available for wafer-scale manufacture.